Rof EOM Intensity Modulator 20G thin film lithium niobate modulator

Short Description:

Thin film lithium niobate intensity modulator is a high-performance electro-optical conversion device, which is independently developed by our company and has complete independent intellectual property rights. The product is packaged by high-precision coupling technology to achieve ultra-high electro-optical conversion efficiency. Compared with the traditional lithium niobate crystal modulator, this product has the characteristics of low half-wave voltage, high stability, small device size and thermo-optical bias control, and can be widely used in digital optical communication, microwave photonics, backbone communication networks and communication research projects.

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Product Detail

Rofea Optoelectronics offer Optical and photonics Electro-optic modulators products

Product Tags

Feature

■ RF bandwidth up to 20/40 GHz

■ Low half-wave voltage

■ Insertion loss as low as 4.5dB

■ Small device size

Rof EOM Intensity Modulator 20G thin film lithium niobate modulator

Parameter C-band

Category	Argument	Sym	Uni	Aointer
Optical performance (@25°C)	Operating wavelength (*)	λ	nm	X2：C
				~1550
	Optical extinction ratio (@DC) (**)	ER	dB	≥ 20
	Optical return loss	ORL	dB	≤ -27
	Optical insertion loss (*)	IL	dB	MAX: 5.5Typ: 4.5
Electrical properties (@25°C)	3 dB electro-optical bandwidth (from 2 GHz	S21	GHz	X1: 2	X1: 4
				MIN: 18Typ: 20	MIN: 36Typ: 40
	Rf half wave voltage (@50 kHz)	V_π	V	X3：5	X3：6
				MAX: 3.0Typ: 2.5	MAX: 3.5Typ: 3.0
	Heat modulated bias half wave power	Pπ	mW	≤ 50
	Rf return loss (2 GHz to 40 GHz)	S11	dB	≤ -10
Working condition	Operating temperature	TO	°C	-20~70

* customizable ** High extinction ratio (> 25 dB) can be customized.

Parameter O-band

Category	Argument	Sym	Uni	Aointer
Optical performance (@25°C)	Operating wavelength (*)	λ	nm	X2：O
				~1310
	Optical extinction ratio (@DC) (**)	ER	dB	≥ 20
	Optical return loss	ORL	dB	≤ -27
	Optical insertion loss (*)	IL	dB	MAX: 5.5Typ: 4.5
Electrical properties (@25°C)	3 dB electro-optical bandwidth (from 2 GHz	S21	GHz	X1: 2	X1: 4
				MIN: 18Typ: 20	MIN: 36Typ: 40
	Rf half wave voltage (@50 kHz)	V_π	V	X3：4
				MAX: 2.5Typ: 2.0
	Heat modulated bias half wave power	Pπ	mW	≤ 50
	Rf return loss (2 GHz to 40 GHz)	S11	dB	≤ -10
Working condition	Operating temperature	TO	°C	-20~70

* customizable ** High extinction ratio (> 25 dB) can be customized.

Damage threshold

If the device exceeds the maximum damage threshold, it will cause irreversible damage to the device, and this type of device damage is not covered by the maintenance service.

Argument	Sym	Selectable	MIN	MAX	Uni
Rf input power	Sin	-	18	dBm	Sin
Rf input swing voltage	Vpp	-2.5	+2.5	V	Vpp
Rf input RMS voltage	Vrms	-	1.78	V	Vrms
Optical input power	Pin	-	20	dBm	Pin
Thermotuned bias voltage	Uheater	-	4.5	V	Uheater
Hot tuning bias current	Iheater	-	50	mA	Iheater
Storage temperature	TS	-40	85	℃	TS
Relative humidity (no condensation)	RH	5	90	%	RH

S21 test sample

FIG 1: S21

FIG 2: S11

Order information

Thin film lithium niobate 20 GHz/40 GHz intensity modulator

selectable	Description	selectable
X1	3 dB electro-optical bandwidth	2 or 4
X2	Operating wavelength	O or C
X3	Maximum RF input power	C-band 5 or 6	O-band 4

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Rofea Optoelectronics offers a product line of commercial Electro-optic modulators, Phase modulators, Intensity modulator, Photodetectors, Laser light sources, DFB lasers,Optical amplifiers, EDFA, SLD laser, QPSK modulation, Pulse laser, Light detector, Balanced photodetector, Laser driver, Fiber optic amplifier, Optical power meter, Broadband laser, Tunable laser, Optical detector, Laser diode driver, Fiber amplifier. We also provide many particular modulators for customization, such as 1*4 array phase modulators, ultra-low Vpi, and ultra-high extinction ratio modulators, primarily used in universities and institutes.
Hope our products will be helpful to you and your research.

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