Rof Electro-optic modulator 780nm LiNbO3 Intensity Modulator 10G

Short Description:

The LiNbO3 intensity modulator is widely used in high-speed optical communication system, laser sensing and ROF systems because of well electro-optic performance. The R-AM series based on MZ push-pull structure and X-cut design, has stable physical and chemical characteristics, which can be applied both in laboratory experiments and industrial systems.

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Product Detail

Rofea Optoelectronics offer Optical and photonics Electro-optic modulators products

Product Tags

Feature

* Low insertion loss
* High Bandwidth
* Low half-wave voltage
* Customization option

Electro-optic modulator Electro-optical modulator LiNbO3 intensity modulator MZM Modulator Mach-Zehnder Modulator LiNbO3 modulator Lithium niobate modulator

Application

⚫ ROF systems
⚫ Quantum key distribution
⚫ Laser sensing systems
⚫ Side-band modulation

Rof-AM Series	Rof-AM-07	Rof-AM-08	Rof-AM-10	Rof-AM-13	Rof-AM-15
Operating wavelength	780nm	850nm	1064nm	1310nm	1550nm
Bandwidth	10GHz	10GHz	10/20GHz	2.5GHz	50GHz	10GHz	20GHz	40GHz
Insertion Loss	＜5dB	＜5dB	＜5dB	＜5dB	＜4dB
Extinction ratio @DC	＞20dB	＞20dB	＞20dB	＞20dB	＞20dB
V_Π@RF (1KHz)	＜3V	＜3V	＜4V	<3.5V	＜6V	<5V
V_Π@Bias	＜3.5V	＜3.5V	＜5V	<5V	<8V	<7V

Ordering Information

Rof

XXG

Type：AM---Intensity Modulator

Wavelength：

07---780nm
08---850nm

10---1060nm

13---1310nm

15---1550nm

Bandwidth：

10GHz

20GHz

40GHz

50GHz

Monitor PD:

PD---With PD
00 --- No PD

In-Out Fiber type：PP---PM/PM

Optical connector：FA---FC/APCFP---FC/PC

SP---Customization

R-AM-07-10G

Wavalength 710nm 10GHz Intensity modulator

Parameter				Symbol		Min	Typ	Max	Unit
Optical parameters
Operating wavelength				l		760	780	800	nm
Insertion loss				IL			4.5	5	dB
Optical return loss				ORL				-45	dB
Switch extinction ratio @DC				ER@DC		20	23		dB
Optical fiber	Input port					PM780 fiber(125/250μm)
	output port					PM780 fiber(125/250μm)
Optical fiber interface						FC/PC、FC/APC Or Customization
Electrical parameters
Operating bandwidth （-3dB）					S₂₁	10	12		GHz
Half-wave voltage Vpi		RF			@1KHz		2.5	3	V
		Bias			@1KHz		3	4	V
Electrical return loss					S₁₁		-12	-10	dB
Input impedance			RF		Z_RF	50			W
			Bias		Z_BIAS	1M			W
Electrical interface						SMA(f)

Limit Conditions

Parameter	Symbol	Unit	Min	Typ	Max
Input optical power	P_in,Max	dBm			20
Input RF power		dBm			28
bias voltage	Vbias	V	-15		15
Operating temperature	Top	℃	-10		60
Storage temperature	Tst	℃	-40		85
Humidity	RH	%	5		90

S21 Curve

&S11 Curve

S21&s11 curves

Mechanical Diagram

PORT	Symbol	Note
In	Optical input port	PM Fiber (125μm/250μm)
Out	Optical output port	PM and SMF option
RF	RF input port	SMA(f)
Bias	Bias control port	1,2 Bias, 34-N/C

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Rofea Optoelectronics offers a product line of commercial Electro-optic modulators, Phase modulators, Intensity modulator, Photodetectors, Laser light sources, DFB lasers,Optical amplifiers, EDFA, SLD laser, QPSK modulation, Pulse laser, Light detector, Balanced photodetector, Laser driver, Fiber optic amplifier, Optical power meter, Broadband laser, Tunable laser, Optical detector, Laser diode driver, Fiber amplifier. We also provide many particular modulators for customization, such as 1*4 array phase modulators, ultra-low Vpi, and ultra-high extinction ratio modulators, primarily used in universities and institutes.
Hope our products will be helpful to you and your research.

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