News

  • Fiber bundle technology improves the power and brightness of blue semiconductor laser

    Fiber bundle technology improves the power and brightness of blue semiconductor laser

    Fiber bundle technology improves the power and brightness of blue semiconductor laser Beam shaping using the same or close wavelength of the laser unit is the basis of multiple laser beam combination of different wavelengths. Among them, spatial beam bonding is to stack multiple laser beams in sp...
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  • Introduction to Edge Emitting Laser (EEL)

    Introduction to Edge Emitting Laser (EEL)

    Introduction to Edge Emitting Laser (EEL) In order to obtain high-power semiconductor laser output, the current technology is to use edge emission structure. The resonator of the edge-emitting semiconductor laser is composed of the natural dissociation surface of the semiconductor crystal, and th...
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  • High performance ultrafast wafer laser technology

    High performance ultrafast wafer laser technology

    High performance ultrafast wafer laser technology High-power ultrafast lasers are widely used in advanced manufacturing, information, microelectronics, biomedicine, national defense and military fields, and relevant scientific research is vital to promote national scientific and technological inn...
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  • TW class attosecond X-ray pulse laser

    TW class attosecond X-ray pulse laser

    TW class attosecond X-ray pulse laser Attosecond X-ray pulse laser with high power and short pulse duration are the key to achieve ultrafast nonlinear spectroscopy and X-ray diffraction imaging. The research team in the United States used a cascade of two-stage X-ray free electron lasers to outpu...
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  • Introduction to vertical cavity surface emitting semiconductor laser (VCSEL)

    Introduction to vertical cavity surface emitting semiconductor laser (VCSEL)

    Introduction to vertical cavity surface emitting semiconductor laser (VCSEL) Vertical external cavity surface-emitting lasers were developed in the mid-1990s to overcome a key problem that has plagued the development of traditional semiconductor lasers: how to produce high-power laser outputs wit...
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  • Excitation of second harmonics in a wide spectrum

    Excitation of second harmonics in a wide spectrum

    Excitation of second harmonics in a wide spectrum Since the discovery of second-order nonlinear optical effects in the 1960s, has aroused wide interest of researchers, so far, based on the second harmonic, and frequency effects, has produced from the extreme ultraviolet to the far infrared band o...
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  • Polarization electro-optic control is realized by femtosecond laser writing and liquid crystal modulation

    Polarization electro-optic control is realized by femtosecond laser writing and liquid crystal modulation

    Polarization electro-optic control is realized by femtosecond laser writing and liquid crystal modulation Researchers in Germany have developed a novel method of optical signal control by combining femtosecond laser writing and liquid crystal electro-optic modulation. By embedding liquid crystal ...
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  • Change the pulse speed of the super-strong ultrashort laser

    Change the pulse speed of the super-strong ultrashort laser

    Change the pulse speed of the super-strong ultrashort laser Super ultra-short lasers generally refer to laser pulses with pulse widths of tens and hundreds of femtoseconds, peak power of terawatts and petawatts, and their focused light intensity exceeds 1018 W/cm2. Super ultra-short laser and its...
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  • Single photon InGaAs photodetector

    Single photon InGaAs photodetector

    Single photon InGaAs photodetector With the rapid development of LiDAR, the light detection technology and ranging technology used for automatic vehicle tracking imaging technology also have higher requirements, the sensitivity and time resolution of the detector used in the traditional low light...
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  • Structure of InGaAs photodetector

    Structure of InGaAs photodetector

    Structure of InGaAs photodetector Since the 1980s, researchers at home and abroad have studied the structure of InGaAs photodetectors, which are mainly divided into three types. They are InGaAs metal-Semiconductor-metal photodetector (MSM-PD), InGaAs PIN Photodetector (PIN-PD), and InGaAs Avalanc...
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  • High refrequency extreme ultraviolet light source

    High refrequency extreme ultraviolet light source

    High refrequency extreme ultraviolet light source Post-compression techniques combined with two-color fields produce a high-flux extreme ultraviolet light source For Tr-ARPES applications, reducing the wavelength of driving light and increasing the probability of gas ionization are effective mean...
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  • Advances in extreme ultraviolet light source technology

    Advances in extreme ultraviolet light source technology

    Advances in extreme ultraviolet light source technology In recent years, extreme ultraviolet high harmonic sources have attracted wide attention in the field of electron dynamics due to their strong coherence, short pulse duration and high photon energy, and have been used in various spectral and...
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